By R. Triboulet, et al.
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Additional resources for CdTe and Related Compounds - Physics, Defects, etc.,
Experimentally L is determined from the decay of excess minority carriers which are generated locally by either a photon flux or an electron beam, or by a more complex photocurrent analysis. Experimental diffusion lengths for both conductivity types and various doping levels in both single crystal and polycrystalline CdTe have been tabulated by Marfaing . 18 mm when the electron concentration n increases from 2 Â 1013 to 8 Â 1017 cmÀ3; logðLh Þ % 4:9 À 0:315 logðnÞ; ð14Þ À3 where Lh is in mm and n is in cm .
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9 and the oscillator strengths of TO and LO modes in Fig. 10. 0 (7). 8 x ZnTe Figure 9 TO and LO frequencies in Cd1ÀxZnxTe versus x. The dotted lines are the fits from a MREI model. 8 x ZnTe Figure 10 Oscillator strengths of TO (A) and LO (B) modes in Cd1ÀxZnxTe versus x. The dotted lines are guided by eye. strengths of TO modes behave as in two-mode case (Fig. 10A). But the compositional dependence of the LO oscillator strengths (Fig. 10B) is like to one-mode behavior. Really, the high-frequency LO mode (the curve LO1 in Fig.